simulator lang=spectre // All the parameters that model the capacitance of // the varactor and the temperature dependence of it // has been copied from the teaching model for TT process. // (cj, mj, cjsw, vsjw, msjw, pb, tlev,tlevc) // // imax is chosen arbitarily high as 1e20, so that you will not // have any numerical problems during your simulations. This is // the parameter sets the maximum current can flow through // the varactor. // // ATTENTION !!! // IMPORTANT: The area and perimeter of the "dio"(which is the // main diode in varactor model) is calculated for L=2 micron, // W=5 micron and number of fingers of 30. Thus if you need to // have higher capacitance, just put several in paralel. However, // if you need lower capacitance change the area and perimeter // of models by using the following formulas. // // For model dio // area= number of fingers *(2 microns * 5 microns) // perim= number of fingers * 2 *(2 microns * 5 microns) // // For model dionw_sub // Just multiply the values of "dio" by 2. // inline subckt varactor (PLUS MINUS) diode1 (PLUS MINUS) dio diode2 (0 MINUS) dionw_sub ends varactor model dio diode + level=3 area=3e-10 perim=4.2e-4 + is=1.2e-07 + rs=1e-09 ik=3e7 + bv=10 ibv=150 tnom=27 + cj=1.165397e-3 mj=0.4212414 + cjsw=2.042242e-10 mjsw=0.35885597 + pb=0.7342005 vjsw=0.68 + cta=0.00104 ctp=6.8e-04 + pta=1.5e-03 ptp=1.5e-03 + tlev=1 eg=1.17 xti=3 + tlevc=1 imax=1e20 model dionw_sub diode + level=3 area=6e-09 perim=8.4e-3 + is=4.1e-06 isw=3.2e-12 + rs=9e-06 ik=425 ikp=3.21e+04 + bv=15 tnom=27 + cjo=1.1e-4 mj=0.5 + cjsw=2.4e-11 mjsw=0.33 + pb=0.75 vjsw=0.75 + tlev=1 eg=1.17 xti=3 + tlevc=1 imax=1e20